1.34 μm VECSEL mode-locked with a GaSb-based SESAM.

Mode locking of a 1.34 μm vertical external cavity surface emitting laser is demonstrated using a GaSb-based semiconductor saturable absorber mirror (SESAM). The SESAM includes six AlGaSb quantum wells (QWs) with an absorption edge at ∼1.

Sub-10 optical-cycle passively mode-locked Tm:(LuSc)O ceramic laser at 2 µm.

A Tm-doped mixed sesquioxide ceramic laser is mode-locked near 2 µm using InGaAsSb quantum-well semiconductor saturable absorber and chirped mirrors for dispersion compensation. Maximum average output power of 175 mW is achieved for a pulse duration of 230 fs at a repetition rate of 78.9 MHz with a 3% output coupler.

Ho:KY(WO) thin-disk laser passively Q-switched by a GaSb-based SESAM.

A Holmium thin-disk laser based on a 3 at.% Ho:KY(WO) / KY(WO) epitaxy and single-bounce pumping by a 1960 nm Tm-fiber laser is passively Q-switched with a GaSb-based quantum-well semiconductor saturable absorber mirror. It generates an average output power of 551 mW at 2056 nm with a slope efficiency of 44% (with respect to the absorbed pump power).

87 fs mode-locked Tm,Ho:CaYAlO laser at ∼2043 nm.

We report on, to the best of our knowledge, the first sub-100 fs mode-locked Ho-laser in the 2 μm spectral range employing a disordered co-doped Tm,Ho:CaYAlO (Tm,Ho:CALYO) crystal as a gain medium. Pulses as short as 87 fs are produced with an average output power of 27 mW at 80.45 MHz repetition rate.

Diode-pumped Tm:KY(WO) laser passively modelocked with a GaSb-SESAM.

We present the first diode-pumped modelocked thulium (Tm) laser based on a double-tungstate crystalline gain material. The solid-state laser consists of a Tm:KY(WO) crystal as gain medium and a GaInSb/GaSb quantum well saturable absorber for self-starting passive mode locking. The laser is pumped by a multi-mode fiber-coupled laser diode at a wavelength of 793 nm.