Single-trial detection of auditory cues from the rat brain using memristors.

Implantable devices hold the potential to address conditions currently lacking effective treatments, such as drug-resistant neural impairments and prosthetic control. Medical devices need to be biologically compatible while providing enhanced performance metrics of low-power consumption, high accuracy, small size, and minimal latency to enable ongoing intervention in brain function. Here, we demonstrate a memristor-based processing system for single-trial detection of behaviorally meaningful brain signals within a timeframe that supports real-time closed-loop intervention.

Compliance-free, analog RRAM devices based on SnO.

Brain-inspired resistive random-access memory (RRAM) technology is anticipated to outperform conventional flash memory technology due to its performance, high aerial density, low power consumption, and cost. For RRAM devices, metal oxides are exceedingly investigated as resistive switching (RS) materials. Among different oxides, tin oxide (SnO) received minimal attention, although it possesses excellent electronic properties.

An FPGA-based system for generalised electron devices testing.

Electronic systems are becoming more and more ubiquitous as our world digitises. Simultaneously, even basic components are experiencing a wave of improvements with new transistors, memristors, voltage/current references, data converters, etc, being designed every year by hundreds of R &D groups world-wide. To date, the workhorse for testing all these designs has been a suite of lab instruments including oscilloscopes and signal generators, to mention the most popular.

Palimpsest memories stored in memristive synapses.

Biological synapses store multiple memories on top of each other in a palimpsest fashion and at different time scales. Palimpsest consolidation is facilitated by the interaction of hidden biochemical processes governing synaptic efficacy during varying lifetimes. This arrangement allows idle memories to be temporarily overwritten without being forgotten, while previously unseen memories are used in the short term.

Selectively biased tri-terminal vertically-integrated memristor configuration.

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively limited. Here we propose a vertically stacked memristor configuration with a shared middle electrode.