This paper reports the strong coupling between Al nanostructure and two-dimensional (2D) layered perovskite PEAPbI (PEPI) films. The high exciton binding energy of 118 meV and long carrier lifetime of 216 ps are characterized from the 2D PEAPbI film, which indicates that the excitons in perovskite are robust and can couple to metal plasmons. The ordinary and extraordinary optical dispersions are revealed from the anisotropic 2D perovskite.
View Article and Find Full Text PDFThe telecommunication wavelengths are crucial for developing a photonic integrated circuit (PIC). The absorption fingerprints of many gases lie within these spectral ranges, offering the potential to create a miniaturized gas sensor for PIC. This work presents novel double Fano resonances within the telecommunication band, based on silicon metasurfaces for selective gas sensing applications.
View Article and Find Full Text PDFIn this work, a higher order-to-fundamental mode converter is reported and analyzed based on an asymmetric dual channel waveguide (ADC-WG) on silicon. In the reported structure, one of the two waveguides is infiltrated with nematic liquid crystal (NLC) material to add temperature tunability while the other one is a solid BK7 waveguide. The modal characteristics are obtained using the full vectorial finite difference method (FVFDM).
View Article and Find Full Text PDFInverted perovskite solar cells (PSCs) attract researchers' attention for their potential application due to the low-temperature fabrication, negligible hysteresis and compatibility with multi-junction cells. However, the low-temperature fabricated perovskite films containing excessive undesired defects are not benefit for improving the performance of the inverted PSCs. In this work, we used a simple and effective passivation strategy that Poly(ethylene oxide) (PEO) polymer as an antisolvent additive to modify the perovskite films.
View Article and Find Full Text PDFReduction of the crosstalk (CT) between contiguous photonic components is still a big challenge in fabricating high packing density photonic integrated circuits (PICs). Few techniques to accomplish that goal have been offered in recent years but all in the near-IR region. In this paper, we report a design for realizing a highly efficient CT reduction in the MIR regime, for the first time to the best of our knowledge.
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