Anisotropic Thermal Conductivity of Inkjet-Printed 2D Crystal Films: Role of the Microstructure and Interfaces.

Two-dimensional (2D) materials are uniquely suited for highly anisotropic thermal transport, which is important in thermoelectrics, thermal barrier coatings, and heat spreaders. Solution-processed 2D materials are attractive for simple, low-cost, and large-scale fabrication of devices on, virtually, any substrate. However, to date, there are only few reports with contrasting results on the thermal conductivity of graphene films, while thermal transport has been hardly measured for other types of solution-processed 2D material films.

Extraordinary lattice thermal conductivity of gold sulfide monolayers.

Gold sulfide monolayers (α-, β-AuS, α-, β-, γ-AuS) have emerged as a new class of two-dimensional (2D) materials with appealing properties such as high thermal and dynamical stability, oxidation resistance, and excellent electron mobility. However, their thermal properties are still unexplored. In this study, based on first-principles calculations and the Peierls-Boltzmann transport equation, we report the lattice thermal conductivity () and related phonon thermal properties of all members of this family.

Role of vibrational properties and electron-phonon coupling on thermal transport across metal-dielectric interfaces with ultrathin metallic interlayers.

We systematically analyze the influence of 5 nm thick metal interlayers inserted at the interface of several sets of different metal-dielectric systems to determine the parameters that most influence interface transport. Our results show that despite the similar Debye temperatures of AlOand AlN substrates, the thermal boundary conductance measured for the Au/AlOsystem with Ni and Cr interlayers is ∼2× and >3× higher than the corresponding Au/AlN system, respectively. We also show that for crystalline SiO(quartz) and AlOsubstrates having highly dissimilar Debye temperature, the measured thermal boundary conductance between Al/AlOand Al/SiOare similar in the presence of Ni and Cr interlayers.

Corrigendum: Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers (2021085702).

Some typographical errors were made in the original version of the manuscript associated with the value of the electron-phonon coupling constant for Ta, which are corrected here.

Role of the electron-phonon coupling in tuning the thermal boundary conductance at metal-dielectric interfaces by inserting ultrathin metal interlayers.

Varying the thermal boundary conductance at metal-dielectric interfaces is of great importance for highly integrated electronic structures such as electronic, thermoelectric and plasmonic devices where heat dissipation is dominated by interfacial effects. In this paper we study the modification of the thermal boundary conductance at metal-dielectric interfaces by inserting metal interlayers of varying thickness below 10 nm. We show that the insertion of a tantalum interlayer at the Al/Si and Al/sapphire interfaces strongly hinders the phonon transmission across these boundaries, with a sharp transition and plateau within ∼1 nm.