Publications by authors named "S P Obukhov"

Diffusion of deuterium in potassium is studied herein. Mass transfer is controlled predominantly by the mechanism of overbarrier atomic jumps at temperatures 120-260 K and by the tunneling mechanism at 90-120 K. These results together with literature data allowed us to determine conditions under which the quantum diffusion of hydrogen in metals can be observed, which is a fundamental problem.

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The online nuclear reaction analysis technique has been applied to study the temperature dependence of deuterium diffusion coefficients for deuterium in sodium at temperatures ranging between 110 and 240 K, and at cryogenic temperatures, below 160 K, tunneling of deuterium atoms in the metal lattice has been observed. Above 160 K, diffusion occurs by the classical mechanism of overbarrier atomic jumps. Results of quantum diffusion of deuterium in a metal have been obtained for the first time; they used to be known only for the lightest hydrogen isotope, protium, in niobium and tantalum.

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Understanding the consequences of the noncrossing constraint is one of the remaining challenges in the physics of walks and polymers. To address this problem, we performed molecular simulations for the separation of only two initially connected, overlapping polymer chains with interactions tuned such that they are nearly random walks. The separation time for a configuration strongly correlates with the number of monomer contacts between both chains.

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We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 10(17) cm(-3) in the temperature range T = 300 K-40 mK, magnetic field B = 0-25T and hydrostatic pressure P = 0-17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 10(4)) at B ~ 4T with further gigantic resistivity increase (by factor 10(4)) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K.

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