Fano resonances in gated phosphorene junctions.

Fano resonances appear in plenty of physical phenomena due to the interference phenomena of a continuum spectrum and discrete states. In gated bilayer graphene junctions, the chiral matching at oblique incidence between the spectrum of electron states outside the electrostatic barrier and hole bound states inside it gives rise to an asymmetric line shape in the transmission as a function of the energy or Fano resonance. Here, we show that Fano resonances are also possible in gated phosphorene junctions along the zigzag direction.

Spin-valley polarization and tunneling magnetoresistance in monomer, dimer, and trimer magnetic silicene superlattices.

Monomer, dimer and trimer semiconductor superlattices are an alternative for bandgap engineering due to the possibility of duplicate, triplicate, and in general multiply the number of minibands and minigaps in a specific energy region. Here, we show that monomer, dimer, and trimer magnetic silicene superlattices (MSSLs) can be the basis for tunable magnetoresistive devices due to the multiplication of the peaks of the tunneling magnetoresistance (TMR). In addition, these structures can serve as spin-valleytronic devices due to the formation of two well-defined spin-valley polarization states by appropriately adjusting the superlattice structural parameters.

Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices.

Magnetic silicene superlattices (MSSLs) are versatile structures with spin-valley polarization and tunneling magnetoresistance (TMR) capabilities. However, the oscillating transport properties related to the superlattice periodicity impede stable spin-valley polarization states reachable by reversing the magnetization direction. Here, we show that aperiodicity can be used to improve the spin-valley polarization and TMR by reducing the characteristic conductance oscillations of periodic MSSLs (P-MSSLs).

Temperature effects on the conductance, spin-valley polarization and tunneling magnetoresistance of single magnetic silicene junctions.

Magnetic silicene junctions are versatile structures with spin-valley polarization and magnetoresistive capabilities. Here, we investigate the temperature effects on the transport properties of single magnetic silicene junctions. We use the transfer matrix method and the Landauer-Büttiker formalism to calculate the transmittance, conductance, spin-valley polarization and tunneling magnetoresistance (TMR).

Electronic cloaking of confined states in phosphorene junctions.

We study the electronic transport of armchair (AC) and zigzag (ZZ) gated phosphorene junctions. We find confined states for both direction-dependent phosphorene junctions. In the case of AC junctions confined states are reflected in the transmission properties as Fabry-Pérot resonances at normal and oblique incidence.