Correlation analysis of vibration modes in physical vapour deposited BiSe thin films probed by the Raman mapping technique.

In this work, the Raman spectroscopy mapping technique is used for the analysis of mechanical strain in BiSe thin films of various (3-400 nm) thicknesses synthesized by physical vapour deposition on amorphous quartz and single-layer graphene substrates. The evaluation of strain effects is based on the correlation analysis of in-plane (E ) and out-of-plane (A ) Raman mode positions. For BiSe films deposited on quartz, experimental datapoints are scattered along the line with a slope of ∼0.