The bipolar effect of GaAs substrate and nearby layers on photovoltage of vertical metamorphic InAs/InGaAs in comparison with pseudomorphic (conventional) InAs/GaAs quantum dot (QD) structures were studied. Both metamorphic and pseudomorphic structures were grown by molecular beam epitaxy, using bottom contacts at either the grown n -buffers or the GaAs substrate. The features related to QDs, wetting layers, and buffers have been identified in the photoelectric spectra of both the buffer-contacted structures, whereas the spectra of substrate-contacted samples showed the additional onset attributed to EL2 defect centers.
View Article and Find Full Text PDFThe influence of calcination temperature on copper spatial localization in Y-stabilized ZrO powders was studied by attenuated total reflection, diffuse reflectance, electron paramagnetic resonance, transmission electron microscopy, electron energy loss, and energy-dispersive X-ray spectroscopies. It was found that calcination temperature rise in the range of 500-700 °C caused the increase of copper concentration in the volume of ZrO nanocrystals. This increase was due to Cu in-diffusion from surface complexes that contained copper ions linked with either water molecules or OH groups.
View Article and Find Full Text PDFFourier Transform mid-infrared (FT-IR), Fourier Transform Raman (FT-Raman) and photoluminescence spectroscopies and Two-Dimensional (2D) Correlation Spectroscopic Analysis were employed to examine the anionic and cationic local environments in mono-urethanesils doped with europium triflate (Eu(CF(3)SO(3))(3)). The hybrid host framework of these materials is composed of a siliceous backbone bonded through urethane linkages to CH(3)-terminated polymer chains containing about 7 OCH(2)CH(2) units. Samples with infinity >/= n (composition) >/=5 (where n = OCH(2)CH(2)/Eu(3+)) were studied.
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