Highly efficient passive InP polarization rotator-splitter.

Monolithically integrated polarization beam splitters (PBSs) are needed to reduce the form-factor and assembly cost of optical coherent receivers. A highly efficient passive polarization rotator and splitter based on mode-evolution is demonstrated. The device is fabricated on InP substrate with a single etch-step and uses an adiabatic mode-converter and an asymmetric Y-coupler.

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering.

We demonstrate all-optical wavelength conversion (AOWC) of non-return-to-zero (NRZ) signal based on cross-gain modulation in a single heterogeneously integrated III-V-on-silicon semiconductor optical amplifier (SOA) with an optical bandpass filter. The SOA is 500 μm long and consumes less than 250 mW electrical power. We experimentally demonstrate 12.

Narrow line width frequency comb source based on an injection-locked III-V-on-silicon mode-locked laser.

In this paper, we report the optical injection locking of an L-band (∼1580 nm) 4.7 GHz III-V-on-silicon mode-locked laser with a narrow line width continuous wave (CW) source. This technique allows us to reduce the MHz optical line width of the mode-locked laser longitudinal modes down to the line width of the source used for injection locking, 50 kHz.

III-V-on-silicon anti-colliding pulse-type mode-locked laser.

An anti-colliding pulse-type III-V-on-silicon passively mode-locked laser is presented for the first time based on a III-V-on-silicon distributed Bragg reflector as outcoupling mirror implemented partially underneath the III-V saturable absorber. Passive mode-locking at 4.83 GHz repetition rate generating 3 ps pulses is demonstrated.