Determination of the three-dimensional structure of dislocations in silicon by synchrotron white X-ray topography combined with a topo-tomographic technique.

The determination of the three-dimensional dislocation structure, i.e. the configuration and nature of the dislocations, in silicon by synchrotron white X-ray topography combined with a topo-tomographic technique is demonstrated.

Plane-wave X-ray topography and its application at SPring-8.

Plane-wave X-ray topography experiments were carried out at a 200 m-long beamline, BL20B2, at SPring-8. Relatively high-energy X-rays of 30 keV with an angular divergence of about 0.01 arcsec were produced by using only one collimator crystal.

Synchrotron-radiation X-ray topography of surface strain in large-diameter silicon wafers.

Using a 300 mm-wide monochromatic X-ray beam obtained at beamline BL20B2 of SPring-8, the difference in surface-strain distribution caused by various steps of silicon-wafer manufacturing, i.e. slicing, lapping, etching, grinding and polishing, was studied.