Equilibrium polarization of ultrathin PbTiO3 with surface compensation controlled by oxygen partial pressure.

We present a synchrotron x-ray study of the equilibrium polarization structure of ultrathin PbTiO(3) films on SrRuO(3) electrodes epitaxially grown on SrTiO(3) (001) substrates, as a function of temperature and the external oxygen partial pressure (pO(2)) controlling their surface charge compensation. We find that the ferroelectric Curie temperature (T(C)) varies with pO(2) and has a minimum at the intermediate pO(2), where the polarization below T(C) changes sign. The experiments are in qualitative agreement with a model based on Landau theory that takes into account the interaction of the phase transition with the electrochemical equilibria for charged surface species.

Giant piezoelectricity on Si for hyperactive MEMS.

Microelectromechanical systems (MEMS) incorporating active piezoelectric layers offer integrated actuation, sensing, and transduction. The broad implementation of such active MEMS has long been constrained by the inability to integrate materials with giant piezoelectric response, such as Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3) (PMN-PT). We synthesized high-quality PMN-PT epitaxial thin films on vicinal (001) Si wafers with the use of an epitaxial (001) SrTiO(3) template layer with superior piezoelectric coefficients (e(31,f) = -27 ± 3 coulombs per square meter) and figures of merit for piezoelectric energy-harvesting systems.

Polarization switching without domain formation at the intrinsic coercive field in ultrathin ferroelectric PbTiO₃.

Polarization switching in ferroelectrics has been thought to occur only through the nucleation and growth of new domains. Here we use in situ synchrotron x-ray scattering to monitor switching controlled by applied chemical potential. In sufficiently thin PbTiO₃ films, nucleation is suppressed and switching occurs by a continuous mechanism, i.

Ferroelectricity in ultrathin BaTiO3 films: probing the size effect by ultraviolet Raman spectroscopy.

We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature Tc in strained BaTiO3 films grown on SrTiO3 substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring Tc in films as thin as 1.6 nm, and a film thickness variation from 1.

Coexistence of weak ferromagnetism and ferroelectricity in the high pressure LiNbO3-type phase of FeTiO3.

We report the magnetic and electrical characteristics of polycrystalline FeTiO_{3} synthesized at high pressure that is isostructural with acentric LiNbO_{3} (LBO). Piezoresponse force microscopy, optical second harmonic generation, and magnetometry demonstrate ferroelectricity at and below room temperature and weak ferromagnetism below approximately 120 K. These results validate symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LBO structure.