Growth Mechanism of Semipolar AlN Layers by HVPE on Hybrid SiC/Si(110) Substrates.

In this work, the growth mechanism of aluminum nitride (AlN) epitaxial films by hydride vapor phase epitaxy (HVPE) on silicon carbide (SiC) epitaxial layers grown on silicon (110) substrates is investigated. The peculiarity of this study is that the SiC layers used for the growth of AlN films are synthesized by the method of coordinated substitution of atoms. In this growth method, a part of the silicon atoms in the silicon substrate is replaced with carbon atoms.

Dielectric Function and Magnetic Moment of Silicon Carbide Containing Silicon Vacancies.

In this work, silicon carbide layers containing silicon vacancies are grown by the Method of Coordinated Substitution of Atoms (MCSA). The main idea of this fundamentally new method is that silicon vacancies are first created in silicon, which is much simpler, and only then is silicon converted into silicon carbide by chemical reaction with carbon monoxide. The dielectric function of silicon carbide containing silicon vacancies, grown on both n- and p-type silicon substrates, is measured for the first time.

Theoretical aspects of the growth of a non-Kossel crystal from vapours: the role of advacancies.

The growth of an arbitrary multicomponent non-Kossel crystal the Burton-Cabrera-Frank mechanism is studied, considering the effect of advacancies and their recombination with adatoms on the surface. An analysis is carried out for two cases: growth due to vapours and growth due to chemical reactions. The analytical expressions are found for the rate of advancement of a group of equidistant steps and the crystal growth rate considering the properties of all the species involved in the growth process.

Spin Polarization and Magnetic Moment in Silicon Carbide Grown by the Method of Coordinated Substitution of Atoms.

In the present work, a new method for obtaining silicon carbide of the cubic polytype 3C-SiC with silicon vacancies in a stable state is proposed theoretically and implemented experimentally. The idea of the method is that the silicon vacancies are first created by high-temperature annealing in a silicon substrate Si(111) doped with boron B, and only then is this silicon converted into 3C-SiC(111), due to a chemical reaction with carbon monoxide CO. A part of the silicon vacancies that have bypassed "chemical selection" during this transformation get into the SiC.

Special Issue: Silicon Carbide: From Fundamentals to Applications.

Most of the wide variety of electronic devices today are silicon-based [...