Paramagnetic Intrinsic Defects in Polycrystalline Large-Area 2D MoS Films Grown on SiO by Mo Sulfurization.

A low-temperature electron spin resonance study has been carried out on large-area high-purity polycrystalline two-dimensional few monolayer (ML) 2H MoS films synthesized by sulfurization of Mo layers, with intent to atomically assess mobility-degrading detrimental point defects. This reveals the presence of a distinct previously unreported anisotropic defect of axial symmetry about the c-axis characterized by g  = 2.00145 and g  = 2.

The lead acceptor in p-type natural 2H-polytype MoS crystals evidenced by electron paramagnetic resonance.

A low-temperature (T  =  1.5-8 K) electron paramagnetic resonance study of p-type 2H-polytype natural MoS crystals reveals a previously unreported anisotropic signal of corresponding defect density (spin S  =  ½) ~5  ×  10 cm. For the applied magnetic field B//c-axis, the response is comprised of a single central asymmetric Zeeman peak at zero-crossing g  =  2.