Single In Ga As nanowire/p-Si heterojunction based nano-rectifier diode.

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In Ga As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied.