Spectral reflectance of core-shell GaN-(Al/Hf)O nanowires within adapted effective medium approximation.

Gallium nitride-based nanowires (NWs) overcome heteroepitaxy limits, enabling GaN-on-silicon devices, and offer high sensitivity for detection, sensing, and photocatalysis. Additional nanowire coating enhances their performance, protects against photoadsorption, and enables control over structural and optical properties. In this work, we investigate core-shell GaN-(Al/Hf)O nanowires, which meet the aforementioned expectations.

Crystal Lattice Recovery and Optical Activation of Yb Implanted into β-GaO.

β-GaO is an ultra-wide bandgap semiconductor (E~4.8 eV) of interest for many applications, including optoelectronics. Undoped GaO emits light in the UV range that can be tuned to the visible region of the spectrum by rare earth dopants.

Enhancing GaN Nanowires Performance Through Partial Coverage with Oxide Shells.

Core-shell gallium nitride (GaN)-based nanowires offer noteworthy opportunities for innovation in high-frequency opto- and microelectronics. This work delves deeply into the physical properties of crystalline GaN nanowires with aluminum and hafnium oxide shells. Particular attention is paid to partial coverage of nanowires, resulting with exceptional properties.

Atomic Layer Deposition of HfO Films Using TDMAH and Water or Ammonia Water.

Atomic layer deposition of HfO from TDMAH and water or ammonia water at different temperatures below 400 °C is studied. Growth per cycle (GPC) has been recorded in the range of 1.2-1.

Enhanced Luminescence of Yb Ions Implanted to ZnO through the Selection of Optimal Implantation and Annealing Conditions.

Rare earth-doped zinc oxide (ZnO:RE) systems are attractive for future optoelectronic devices such as phosphors, displays, and LEDs with emission in the visible spectral range, working even in a radiation-intense environment. The technology of these systems is currently under development, opening up new fields of application due to the low-cost production. Ion implantation is a very promising technique to incorporate rare-earth dopants into ZnO.