Strong magnetization and anisotropy of MnGethin films on Ge(001).

We report on the growth of MnGethin films on Ge(001) substrates following two methods: solid phase epitaxy (SPE) and reactive deposition epitaxy (RDE). We have varied the thickness of the films, in order to study the magnetization and anisotropy evolution. A strongly enhanced magnetization of 1580 kA m, compared to 1200 ± 150 kA mfor films grown on Ge(111), has been measured on ultrathin films of 5 nm grown by RDE.

Core to shell switching of the conduction channel on SnO nanowire sensors.

A sensor based on random connections of single-crystalline SnO nanowires (NWs) has been fabricated for ethanol detection. The NW length of ∼10 μm leads to the formation of several random node connections between the Ag electrodes. The samples were subjected to thermal treatments under a reducing atmosphere of H/Ar, to generate oxygen vacancies at the surface of the NWs.

Modification of crystal anisotropy and enhancement of magnetic moment of Co-doped SnO2 thin films annealed under magnetic field.

Co-doped SnO2 thin films were grown by sputtering technique on SiO2/Si(001) substrates at room temperature, and then, thermal treatments with and without an applied magnetic field (HTT) were performed in vacuum at 600°C for 20 min. HTT was applied parallel and perpendicular to the substrate surface. Magnetic M(H) measurements reveal the coexistence of a strong antiferromagnetic (AFM) signal and a ferromagnetic (FM) component.

Role of vanadium ions, oxygen vacancies, and interstitial zinc in room temperature ferromagnetism on ZnO-V2O5 nanoparticles.

In this work, we present the role of vanadium ions (V+5 and V+3), oxygen vacancies (VO), and interstitial zinc (Zni) to the contribution of specific magnetization for a mixture of ZnO-V2O5 nanoparticles (NPs). Samples were obtained by mechanical milling of dry powders and ethanol-assisted milling for 1 h with a fixed atomic ratio V/Zn?=?5% at. For comparison, pure ZnO samples were also prepared.

Modification of optical and electrical properties of zinc oxide-coated porous silicon nanostructures induced by swift heavy ion.

Morphological and optical characteristics of radio frequency-sputtered zinc aluminum oxide over porous silicon (PS) substrates were studied before and after irradiating composite films with 130 MeV of nickel ions at different fluences varying from 1 × 1012 to 3 × 1013 ions/cm2. The effect of irradiation on the composite structure was investigated by scanning electron microscopy, X-ray diffraction (XRD), photoluminescence (PL), and cathodoluminescence spectroscopy. Current-voltage characteristics of ZnO-PS heterojunctions were also measured.