Structural analysis of the SiO2/Si100 interface by means of photoelectron diffraction.

The local environment of Si atoms at the interface between a thermally grown SiO2 film and Si(100) was studied by angle-scanned photoelectron diffraction. Experimental photoelectron diffraction patterns for each Si oxidation state were obtained from the results of least squares fitting on Si 2p core-level spectra. A comparison of the diffraction patterns with multiple-scattering calculations including an R-factor analysis was performed.

Local atomic environment of Si suboxides at the SiO2/Si(111) interface determined by angle-scanned photoelectron diffraction.

Local environments of Si suboxides at the interface between a thermally grown SiO2 film and Si(111) were studied by angle-scanned photoelectron diffraction. Si 2p core-level spectra containing chemically shifted components were recorded. The components were deconvoluted by least squares fitting and assigned to different Si oxidation states.