Study of trivalent samarium ion embedded lithium-based borate glass for high-density optical memory devices.

Sm ions doped strontium lithium lead borate glasses (SLLB:Sm) were prepared using a conventional melt-quenching technique. The glasses were analyzed using X-ray diffractometry and Fourier transform infrared spectroscopy, optical absorption, fluorescence spectral analysis, and fluorescence lifetime decay. The Judd-Ofelt (J-O) parameters and radiative parameters of the SLLB:Sm10 glass (1.

Characterization of sprayed TiO2 on ITO substrates for solar cell applications.

Titanium dioxide (TiO2) thin films had been deposited with various substrate temperatures by spray pyrolysis technique onto ITO substrates. All films exhibited polycrystalline nature with the preferred orientation along (101) plane. At the substrate temperature 450 °C, the film favored the formation of anatase phase.

Effect of In doping on the properties and antibacterial activity of ZnO films prepared by spray pyrolysis.

Pure and In-doped ZnO thin films were deposited onto glass substrates by spray pyrolysis technique. XRD results showed that all films were polycrystalline in nature with the wurzite structure. A change in preferential orientation from (002) to (101) plane was observed with increase in content of Indium.

Structural, optical and electrical properties of Zr-doped In₂O₃ thin films.

Undoped and zirconium doped indium oxide (ZrIO) thin films were deposited on glass substrate at a substrate temperature of 450°C by spray pyrolysis method. The effect of zirconium (Zr) dopant concentration (0-11 at.%) on the structural, morphological, optical and electrical properties of n-type ZrIO films were studied.

Properties of spray pyrolised ZnO:Sn thin films and their antibacterial activity.

Tin doped zinc oxide (ZnO:Sn) thin films were deposited onto glass substrates by the spray pyrolysis technique with the substrate temperature 400 °C. The structural, optical, photoluminescence (PL) properties and morphological studies were investigated for the films deposited with various doping concentration (0, 2, 4, 6 and 8 at.%) of tin.