Lattice relaxation at V(-), NV(-), and NVN(-) defects in diamond investigated by positron annihilation.

Experimental positron lifetime data for three vacancy-related defects in synthetic type Ib diamonds with well known structures are uniquely suitable for comparison with theoretical investigations of lattice relaxation.

Evidence for a vacancy-phosphorus-oxygen complex in silicon.

Low-energy (∼0.5 MeV) electrons arising from (60)Co γ-irradiation were used to create phosphorus-vacancy (PV) pairs and oxygen-vacancy pairs in Czochralski-grown Si. Positron annihilation data show that PV pairs anneal in two stages: the commonly observed stage around 125 °C, where one third of the pairs disappear with an activation energy of 0.

Defects in electron irradiated boron-doped diamonds investigated by positron annihilation and optical absorption.

Synthetic boron-doped single-crystal diamonds were irradiated by a pulsed electron beam at 2.2 MeV to various accumulated fluences from 0.7 × 10(18) to 10 × 10(18) e(-) cm(-2).