Dual Antiplatelet Treatment up to 72 Hours After Ischemic Stroke Stratified by Risk Profile: A Post Hoc Analysis.

Background: Risk profile of recurrence may influence the effect of antiplatelet therapy. This study aimed to evaluate the efficacy and safety of clopidogrel-aspirin initiated within 72 hours after symptom onset for acute mild stroke or high-risk transient ischemic attack stratified by risk profile.

Methods: This is a secondary post hoc analysis of the INSPIRES (Intensive Statin and Antiplatelet Therapy for Acute High-risk Intracranial or Extracranial Atherosclerosis) randomized clinical trial that enrolled patients 35 to 80 years old with acute mild ischemic stroke or high-risk transient ischemic attack between 2018 and 2022.

Trimodal thermal energy storage material for renewable energy applications.

The global aim to move away from fossil fuels requires efficient, inexpensive and sustainable energy storage to fully use renewable energy sources. Thermal energy storage materials in combination with a Carnot battery could revolutionize the energy storage sector. However, a lack of stable, inexpensive and energy-dense thermal energy storage materials impedes the advancement of this technology.

Adult-onset dysphagia.

Background: Dysphagia, characterised by a difficulty in swallowing, stems from various causes and is frequently encountered in general practice. The rise in dysphagia in Australia's ageing population necessitates proper management to prevent complications. Recognising and managing dysphagia improves outcomes and quality of life, and reduces secondary complications.

GaAs Solar Cells Grown Directly on V-Groove Si Substrates.

The direct epitaxial growth of high-quality III-V semiconductors on Si is a challenging materials science problem with a number of applications in optoelectronic devices, such as solar cells and on-chip lasers. We report the reduction of dislocation density in GaAs solar cells grown directly on nanopatterned V-groove Si substrates by metal-organic vapor-phase epitaxy. Starting from a template of GaP on V-groove Si, we achieved a low threading dislocation density (TDD) of 3 × 10 cm in the GaAs by performing thermal cycle annealing of the GaAs followed by growth of InGaAs dislocation filter layers.