Perspectives of In-Hospital Intramuscular Naltrexone and Oral Medications for Alcohol Use Disorder: A Study of Addiction Clinicians and Hospitalized Patients.

Background: Alcohol-related hospitalizations are rising; however, medications for alcohol use disorder (M-AUD) are underprescribed despite their effectiveness to reduce heavy drinking. In-hospital administration of intramuscular (IM)-naltrexone may reduce negative health outcomes among people with AUD who are unable to take daily MAUD.

Objective: To assess addiction clinicians' perceptions of offering and administering IM-naltrexone and to assess hospitalized patients' perspectives on their alcohol use and acceptance of MAUD.

Things We Do for No Reason™: Avoiding naltrexone for alcohol use disorder in liver disease.

Hospitalizations related to alcohol use disorder (AUD) are common. Yet, few patients receive pharmacotherapy consistent with guideline recommendations. Previous concerns over the potential hepatotoxicity of naltrexone have been disproven and recent studies have shown its safety and efficacy in patients with cirrhosis.

Strong coupling in metal-semiconductor microcavities featuring Ge quantum wells: a perspective study.

In this work we theoretically investigate the possibility of observing strong coupling at mid-infrared frequencies within the group-IV semiconductor material platform. Our results show that the strong coupling condition is attainable in Ge/SiGe quantum wells integrated in hybrid metal-semiconductor microcavities, featuring a highly n-doped SiGe layer as one of the mirrors.

Integrated PIN modulator and photodetector operating in the mid-infrared range from 5.5 μm to 10 μm.

This study reports the experimental demonstration of the first waveguide-integrated SiGe modulator using a PIN diode operating in a wide spectral range of the mid-infrared region. At the wavelength of 10 µm, an extinction ratio up to 10 dB is obtained in injection regime and 3.2 dB in depletion regime.

Strong hole-photon coupling in planar Ge for probing charge degree and strongly correlated states.

Semiconductor quantum dots (QDs) in planar germanium (Ge) heterostructures have emerged as front-runners for future hole-based quantum processors. Here, we present strong coupling between a hole charge qubit, defined in a double quantum dot (DQD) in planar Ge, and microwave photons in a high-impedance (Z = 1.3 kΩ) resonator based on an array of superconducting quantum interference devices (SQUIDs).