Vapour Liquid Solid Growth Effects on InGaN Epilayers Composition Uniformity in Presence of Metal Droplets.

We investigated the composition uniformity of InGaN epilayers in presence of metal droplets on the surface. We used Plasma Assisted MBE to grow an InGaN sample partially covered by metal droplets and performed structural and compositional analysis. The results showed a marked difference in indium incorporation between the region under the droplets and between them.

Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates.

We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates.

We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1-2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.

Solid-State Dewetting Dynamics of Amorphous Ge Thin Films on Silicon Dioxide Substrates.

We report on the dewetting process, in a high vacuum environment, of amorphous Ge thin films on SiO/Si (001). A detailed insight of the dewetting is obtained by in situ reflection high-energy electron diffraction and ex situ scanning electron microscopy. These characterizations show that the amorphous Ge films dewet into Ge crystalline nano-islands with dynamics dominated by crystallization of the amorphous material into crystalline nano-seeds and material transport at Ge islands.

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A.

We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature. The expected increase in the density with decreasing temperature, indeed, is observed only down to 160 ∘C, where the indium islands undertake the expected liquid-to-solid phase transition. Further decreasing the temperature causes a sizable reduction of the island density.