Future information technology demands ever-faster, low-loss quantum control. Intense light fields have facilitated milestones along this way, including the induction of novel states of matter, ballistic acceleration of electrons and coherent flipping of the valley pseudospin. These dynamics leave unique 'fingerprints', such as characteristic bandgaps or high-order harmonic radiation.
View Article and Find Full Text PDFHarnessing the carrier wave of light as an alternating-current bias may enable electronics at optical clock rates. Lightwave-driven currents have been assumed to be essential for high-harmonic generation in solids, charge transport in nanostructures, attosecond-streaking experiments and atomic-resolution ultrafast microscopy. However, in conventional semiconductors and dielectrics, the finite effective mass and ultrafast scattering of electrons limit their ballistic excursion and velocity.
View Article and Find Full Text PDFMesothelin is a cell surface protein that is overexpressed in numerous cancers, including breast, ovarian, lung, liver, and pancreatic tumors. Aberrant expression of mesothelin has been shown to promote tumor progression and metastasis through interaction with established tumor biomarker CA125. Therefore, molecules that specifically bind to mesothelin have potential therapeutic and diagnostic applications.
View Article and Find Full Text PDFPhys Rev Lett
November 2016
Terahertz magnetic fields with amplitudes of up to 0.4 Tesla drive magnon resonances in nickel oxide while the induced dynamics is recorded by femtosecond magneto-optical probing. We observe distinct spin-mediated optical nonlinearities, including oscillations at the second harmonic of the 1 THz magnon mode.
View Article and Find Full Text PDFTerahertz near fields of gold metamaterials resonant at a frequency of 0.88 THz allow us to enter an extreme limit of nonperturbative ultrafast terahertz electronics: Fields reaching a ponderomotive energy in the keV range are exploited to drive nondestructive, quasistatic interband tunneling and impact ionization in undoped bulk GaAs, injecting electron-hole plasmas with densities in excess of 10^{19} cm^{-3}. This process causes bright luminescence at energies up to 0.
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