Chemical mapping of individual semiconductor nanostructures.

We demonstrate experimentally the power of a novel analytical tool for X-ray spectromicroscopy. This provides a minimally intrusive elemental mapping of surfaces at the nanoscale and holds the promise of remarkable versatility. We have applied our procedure to the characterization of Ge(Si) islands on Si(111) substrates, with the aim of investigating the surface stoichiometry gradients and gaining insight into the intermixing dynamics.

Diffusion dynamics during the nucleation and growth of Ge/Si nanostructures on Si(111).

We report a low energy electron microscopy study of the relation between self-organized Ge/Si(111)nanostructures and their local environment. By comparison with Monte Carlo simulations, three-dimensional islands are shown to display a substantial tendency towards self-ordering. This tendency may result from the diffusive nature of the nucleation processes.