Laser-induced damage threshold of ZnGeP crystal for (sub)picosecond 1-µm laser pulse.

The laser-induced damage threshold (LIDT) was measured for a crystal exposed to 0.3-9.5 ps 1030-nm laser pulses.

Pulse-width-dependent critical power for self-focusing of ultrashort laser pulses in bulk dielectrics.

Microscale filamentation of 0.25 NA-focused, linearly and circularly polarized 1030 nm and 515 nm ultrashort laser pulses of variable pulse widths in fused silica, fluorite, and natural and synthetic diamonds demonstrates the Raman-Kerr effect in the form of critical pulse power magnitudes, proportional to squared wavelength and inversely proportional to laser pulse width of 0.3-10 ps.