Growth, spectroscopy, and laser characterization of Er:KGdYbY(WO) epitaxial layers.

We report on the composition of Er-doped KGdYbY(WO) layers to be grown onto undoped KY(WO) substrate providing fine lattice matching and high refractive index contrast with the substrate and fabrication of high optical quality Er(1.3  at. %):KGdYbY(WO) epitaxial layers with thickness up to 180 μm.

Continuous-wave and Q-switched operation of a compact, diode-pumped Yb3+:KY(WO4)2 planar waveguide laser.

A diode-pumped LPE-grown Yb:KYW planar waveguide laser is demonstrated in a microchip monolithic cavity configuration. Output powers as high as 148 mW and thresholds as low as 40 mW were demonstrated during continuous-wave operation. Pulses of 170 ns duration with maximum pulse energy of 44 nJ at a 722 kHz repetition rate were generated when Q-switched using a semiconductor saturable absorber mirror.