Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer.

Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiO:Nb) is adopted. Hydrofluoric acid treatment is carried out for a part of the samples to remove the thermal oxide layer in the interface of TiO:Nb/n-type layer.