A multilayer graphene film with random twist angles between layers (TAGr) on SiC(0001̄) shows six pairs of redox peaks for Li insertion/extraction reaction. The distributed twisted angle in TAGr regulates Li insertion sites, and smaller -axis expansion (3%) is realized by Li insertion.
View Article and Find Full Text PDFGraphene on SiC (0001‾) tends to grow in multiple layers and does not have a single orientation relation with the SiC substrate. It has been considered impossible to control the rotation angle of multilayer graphene on SiC (0001‾). In this study, we grew graphene on off-axis SiC substrates with various off angles from 0° to 8° and investigated their in-plane rotation and electronic structures systematically.
View Article and Find Full Text PDF