We experimentally reveal the pump-induced loss in a Ti:sapphire laser crystal with 451-nm indium gallium nitride (InGaN) laser diode pumping and show that 478-nm pumping can reduce such loss. The influence of the pump-induced loss at 451-nm pumping is significant even for a crystal that exhibits higher effective figure-of-merit and excellent laser performance at 520-nm pumping. We demonstrate the power scaling of a Ti:sapphire laser by combining 478- and 520-nm InGaN laser diodes and obtain CW output power of 593 mW.
View Article and Find Full Text PDFWe numerically and experimentally demonstrate photon-number squeezed state generation with a symmetric fiber interferometer in an 800-nm wavelength and compared with an asymmetric fiber interferometer, although photon-number squeezed pulses have been generated only with asymmetric interferometers. Even though we obtain -1.0dB squeezing with an asymmetric fiber interferometer, since perfect spectral phase and intensity matching between displacement and signal pulses are achieved with a symmetric fiber interferometer, we obtain better squeezing of -3.
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