Pr:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers.

We attain stable mode-locking of an InGaN laser-diode-pumped Pr:YLF laser with a pump power of 2.8 W using a semiconductor saturable absorption mirror. A maximum averaged output power of 65 mW was obtained with a 45-ps pulse width at a pulse repetition rate of 108 MHz.

50-kHz, 50-ns UV pulse generation by diode-pumped frequency doubling Pr:YLF Q-switch laser with a Cr:YAG saturable absorber.

We demonstrate intracavity second-harmonic generation at 320 nm of a diode-pumped praseodymium-doped YLF laser Q-switched by a Cr:YAG crystal. By employing two 3.5-W high-power blue InGaN diode lasers as the pump source, we obtained 50-ns Q-switched pulses with a pulse energy of 1.

Saturation of 640-nm absorption in Cr⁴⁺:YAG for an InGaN laser diode pumped passively Q-switched Pr³⁺:YLF laser.

We measure the absorption recovery time, the ground- and excited-state absorption cross sections of a Cr4+:YAG crystal at 640 nm for the first time. A pump-probe measurement reveals the existence of two recovery times of 26 ns and 5.6 μs.

InGaN diode pumped actively Q-switched intracavity frequency doubling Pr:LiYF₄ 261 nm laser.

We demonstrate actively Q-switched deep ultraviolet laser operation at 261 and 320 nm by intracavity frequency doubling of an InGaN laser diode-pumped Pr:LiYF₄ laser. We obtain a maximum peak power of 61.6 W (8.