Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature.

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (), and electron spin relaxation times () in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature (430-600 °C) and a high V/III flux ratio using As. At 530 °C < < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in ~40 ns at RT, one order of magnitude longer than those reported so far.