Influence of Atomic Relaxations on the Moiré Flat Band Wave Functions in Antiparallel Twisted Bilayer WS.

Twisting bilayers of transition metal dichalcogenides gives rise to a moiré potential resulting in flat bands with localized wave functions and enhanced correlation effects. In this work, scanning tunneling microscopy is used to image a WS bilayer twisted approximately 3° off the antiparallel alignment. Scanning tunneling spectroscopy reveals localized states in the vicinity of the valence band onset, which is observed to occur first in regions with S-on-S Bernal stacking.

Selective Electron-Phonon Coupling in Dimerized 1T-TaS Revealed by Resonance Raman Spectroscopy.

The layered transition-metal dichalcogenide material 1T-TaS possesses successive phase transitions upon cooling, resulting in strong electron-electron correlation effects and the formation of charge density waves (CDWs). Recently, a dimerized double-layer stacking configuration was shown to form a Peierls-like instability in the electronic structure. To date, no direct evidence for this double-layer stacking configuration using optical techniques has been reported, in particular through Raman spectroscopy.

Ferroelectric Switching at Symmetry-Broken Interfaces by Local Control of Dislocations Networks.

Semiconducting ferroelectric materials with low energy polarization switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Recently discovered interfacial ferroelectricity in bilayers of transition metal dichalcogenide films provides an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of 2D material devices. Here, local control of ferroelectric domains in a marginally twisted WS bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible evolution is understood using a string-like model of the domain wall network (DWN).

Mechanistic Insight into the Limiting Factors of Graphene-Based Environmental Sensors.

Graphene has demonstrated great promise for technological use, yet control over material growth and understanding of how material imperfections affect the performance of devices are challenges that hamper the development of applications. In this work, we reveal new insight into the connections between the performance of the graphene devices as environmental sensors and the microscopic details of the interactions at the sensing surface. We monitor changes in the resistance of the chemical-vapor deposition grown graphene devices as exposed to different concentrations of ethanol.

Fabricating van der Waals Heterostructures with Precise Rotational Alignment.

In this work we describe a technique for creating new crystals (van der Waals heterostructures) by stacking distinct ultrathin layered 2D materials. We demonstrate not only lateral control but, importantly, also control over the angular alignment of adjacent layers. The core of the technique is represented by a home-built transfer setup which allows the user to control the position of the individual crystals involved in the transfer.