Softening of the optical phonon by reduced interatomic bonding strength without depolarization.

Softening of the transverse optical (TO) phonon, which could trigger ferroelectric phase transition, can usually be achieved by enhancing the long-range Coulomb interaction over the short-range bonding force, for example, by increasing the Born effective charges. However, it suffers from depolarization effects as the induced ferroelectricity is suppressed on size reduction of the host materials towards high-density nanoscale electronics. Here, we present an alternative route to drive the TO phonon softening by showing that the abnormal soft TO phonon in rocksalt-structured ultrawide-bandgap BeO (ref.

Dynamical Symmetry-Reduction-Induced Giant Anharmonicity in IV-VI Compounds: Role of Cation Lone-Pair Electrons.

The low thermal conductivity of group IV-VI semiconductors is often attributed to the soft phonons and giant anharmonicity observed in these materials. However, there is still no broad consensus on the fundamental origin of this giant anharmonic effect. Utilizing first-principles calculations and group symmetry analysis, we find that the cation lone-pairs electrons in IV-VI materials cause a significant coupling between occupied cation orbitals and unoccupied cation orbitals due to the symmetry reduction when atoms vibrate away from their equilibrium positions under heating.

Electrode and Electrolyte Co-Energy-Storage Electrochemistry Enables High-Energy Zn-S Decoupled Batteries.

In the search for next-generation green energy storage solutions, Cu-S electrochemistry has recently gained attraction from the battery community owing to its affordability and exceptionally high specific capacity of 3350 mAh g . However, the inferior conductivity and substantial volume expansion of the S cathode hinder its cycling stability, while the low output voltage limits its energy density. Herein, a hollow carbon sphere (HCS) is synthesized as a 3D conductive host to achieve a stable S@HCS cathode, which enables an outstanding cycling performance of 2500 cycles (over 9 months).

Responsive Microgels through RAFT-HDA Dynamic Covalent Bonding Chemistry.

This paper developed a method for preparing ultrasound-responsive microgels based on reversible addition fragmentation chain transfer-hetero Diels-Alder (RAFT-HAD) dynamic covalent bonding. First, a styrene cross-linked network was successfully prepared by a Diels-Alder (DA) reaction between phosphoryl dithioester and furan using double-ended diethoxyphosphoryl dithiocarbonate (BDEPDF) for RAFT reagent-mediated styrene (St) polymerization, with a double-ended dienophile linker and copolymer of furfuryl methacrylate (FMA) and St as the dienophile. Subsequently, the microgel system was constructed by the HDA reaction between phosphoryl disulfide and furan groups using the copolymer of polyethylene glycol monomethyl ether acrylate (OEGMA) and FMA as the dienophore building block and hydrophilic segment and the polystyrene pro-dienophile linker as the cross-linker and hydrophobic segment.

Re-imagining the daniell cell: ampere-hour-level rechargeable Zn-Cu batteries.

The Daniell cell (Cu Zn), was invented almost two centuries ago, but has been set aside due to its non-rechargeable nature and limited energy density. However, these cells are exceptionally sustainable because they do not require rare earth elements, are aqueous and easy to recycle. This work addresses key challenges in making Daniell cells relevant to our current energy crisis.

Association between the severity of metabolic dysfunction-associated fatty liver disease and the risk of colorectal neoplasm: a systematic review and meta-analysis.

Background: The severity of metabolic dysfunction-associated fatty liver disease (MAFLD) reportedly plays a part in the etiology of colorectal tumors. However, there is no consensus.

Methods: Studies relevant with the impact of MAFLD severity on the risk of colorectal neoplasms published before 24th April 2022 were screened.

Extrinsic Photoconduction Induced Short-Wavelength Infrared Photodetectors Based on Ge-Based Chalcogenides.

2D layered photodetectors have been widely researched for intriguing optoelectronic properties but their application fields are limited by the bandgap. Extending the detection waveband can significantly enrich functionalities and applications of photodetectors. For example, after breaking through bandgap limitation, extrinsic Si photodetectors are used for short-wavelength infrared or even long-wavelength infrared detection.

Design Principles of p-Type Transparent Conductive Materials.

Transparent conductive materials (TCMs) has always been playing a significant role in electronic and photovoltaic area, due to its prominent optical and electronic properties. To render those transparent materials highly conductive, efficient n- and p- type doping is critically needed to obtain high concentration of free electron and hole carriers. Despite extensive research over the past five decades, high-quality p-type doping of wide-band-gap transparent materials remains a challenge.

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

The use of an interfacial passivation layer is one important strategy for achieving a high quality interface between high-k and III-V materials integrated into high-mobility metal-oxide-semiconductor field-effect transistor (MOSFET) devices. Here, we propose gallium nitride (GaN) as the interfacial layer between III-V materials and hafnium oxide (HfO2). Utilizing first-principles calculations, we explore the structural and electronic properties of the GaN/HfO2 interface with respect to the interfacial oxygen contents.