Tailoring Li assisted CZTSe film growth under controllable selenium partial pressure and solar cells.

It is still critical to prepare a high-quality absorber layer for high-performance Cu2ZnSnSe4 (CZTSe) multi-component thin film solar cell. The gas pressure during the selenization process is commonly referred to as the pressure of inert gas in the tube furnace, while the exact selenium partial pressure is difficult to be controlled. Therefore, the grain growth under different selenium partial pressures cannot be made clear, and the film quality cannot be controlled as well.

Visual Color Change During Spin-coating Guiding the Quality of Cu ZnSn(S,Se) Films.

Solution method provides a low-cost and environmentally friendly route for the fabrication of Cu ZnSn(S,Se) (CZTSSe) thin-film solar cells. However, uncontrollable quality of the CZTSSe absorber layer will severely limit the device's performance. In this study, it is find that the thickness and the quality of the formed precursor is not stable because of the variation of the viscosity of the precursor solution.

Toward High Efficient Cu ZnSn(S ,Se ) Solar Cells: Break the Limitations of V and FF.

Increasing the fill factor (FF) and the open-circuit voltage (V ) simultaneously together with non-decreased short-circuit current density (J ) are a challenge for highly efficient Cu ZnSn(S,Se) (CZTSSe) solar cells. Aimed at such target in CZTSSe solar cells, a synergistic strategy to tailor the recombination in the bulk and at the heterojunction interface has been developed, consisting of atomic-layer deposited aluminum oxide (ALD-Al O ) and (NH ) S treatment. With this strategy, deep-level Cu defects are converted into shallower V defects and improved crystallinity, while the surface of the absorber is optimized by removing Zn- and Sn-related impurities and incorporating S.

N-Type Surface Design for p-Type CZTSSe Thin Film to Attain High Efficiency.

As a low-cost substitute that uses no expensive rare-earth elements for the high-efficiency Cu(In,Ga)(S,Se) solar cell, the Cu ZnSn(S,Se) (CZTSSe) solar cell has borrowed optimization strategies used for its predecessor to improve its device performance, including a profiled band gap and surface inversion. Indeed, there have been few reports of constructing CZTSSe absorber layers with surface inversion to improve efficiency. Here, a strategy that designs the CZTSSe absorber to attain surface modification by using n-type Ag ZnSnS is demonstrated.