Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.

GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.

Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.

Free-standing gallium nitride (GaN) substrates are in high demand for power devices, laser diodes, and high-power light emitting diodes (LEDs). SixPoint Materials Inc. has begun producing 2" GaN substrates through our proprietary Near Equilibrium AmmonoThermal (NEAT) growth technology.

Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene.

Resonance energy transfer (RET) has been employed for interpreting the energy interaction of graphene combined with semiconductor materials such as nanoparticles and quantum-well (QW) heterostructures. Especially, for the application of graphene as a transparent electrode for semiconductor light emitting diodes, the mechanism of exciton recombination processes such as RET in graphene-semiconductor QW heterojunctions should be understood clearly. Here, we characterized the temperature-dependent RET behaviors in graphene/semiconductor QW heterostructures.

Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors.

We demonstrate a three-section, electrically pulsed quantum cascade laser which consists of a Fabry-Pérot section placed between two sampled grating distributed Bragg reflectors. The device is current-tuned between ten single modes spanning a range of 0.46 μm (63 cm(-1)), from 8.

Photonic crystal disk lasers.

A novel type of nanolasers, which combines the advantages of photonic crystal lasers and microdisk lasers, has been demonstrated based on InAlGaAs/InGaAs quantum wells using pulsed optical pumping at room temperature. It incorporates the properties of small footprint, small mode volume, and submilliwatt threshold, and favors vertical emission. We believe that this type of laser acts as a promising candidate for highly-integrated on-chip nanolasers in applications for signal processing and index sensing.

Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications.

An effective, low cost, simple, and mask-free pathway is demonstrated for achieving density control of the aligned ZnO nanowires grown for large-scale applications. By a slight variation of the thickness of the thermally evaporated gold catalyst film, a significant change in the density of aligned ZnO nanowires has been controlled. The growth processes of the nanowires on an Al(0.

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process.