Study of The Gas-Swelling Mechanisms in Silicon Carbide Ceramics under High-Temperature Irradiation with Helium Ions.

The purpose of this work is to simulate the processes of gaseous swelling in SiC ceramics as well as the associated changes in strength and thermophysical properties under high-temperature irradiation with helium ions. The choices of irradiation conditions (irradiation temperatures of 700 and 1000 K) and irradiation fluences (10-10 ion/cm) are based on the possibilities of modeling the processes of destructive changes in the near-surface layer as a result of the accumulation of gas-filled inclusions during high-dose irradiation. During this study, it was found that an increase in the irradiation temperature of the samples from 700 to 1000 K leads to a decrease in the resistance to gas swelling, since with the temperature increase, the mobility of implanted helium in the near-surface layer grows, which results in an increase in the size of gas-filled bubbles and, as a result, accelerated destruction of the damaged layer.