Defects in chemical vapor deposition (CVD)-grown monolayer MoS are unavoidable and provide a powerful approach to creating single-photon emitters and quantum information systems through localizing excitons. However, insight into the A trion and B/C exciton localization in monolayer MoS remains elusive. Here, we investigate defect-mediated A trion and B/C exciton localization and relaxation in CVD-grown monolayer MoS samples via transient absorption spectroscopy.
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