Silicon nanomembrane phototransistor flipped with multifunctional sensors toward smart digital dust.

The sensing module that converts physical or chemical stimuli into electrical signals is the core of future smart electronics in the post-Moore era. Challenges lie in the realization and integration of different detecting functions on a single chip. We propose a new design of on-chip construction for low-power consumption sensor, which is based on the optoelectronic detection mechanism with external stimuli and compatible with CMOS technology.

Rolling up MoSe Nanomembranes as a Sensitive Tubular Photodetector.

Transition metal dichalcogenides, as a kind of 2D material, are suitable for near-infrared to visible photodetection owing to the bandgaps ranging from 1.0 to 2.0 eV.

Silicon nanomembrane-based near infrared phototransistor with positive and negative photodetections.

Surface plasmon polariton induces hot carrier injection that enables near infrared photodetection in Si nanomembranes and is of great significance for Si photonics integrated circuits. In this study, near infrared photodiode and phototransistor based on Si nanomembranes are designed and demonstrated, where the channel carrier concentration can be tuned through a gate modulation to implement both positive and negative photodetections. Through patterning a nanogroove array, Si nanomembrane-based photodetector exhibits high performance in near infrared range with an Ion/Ioff ratio of 102, and a responsivity of 7 mA W-1, under 1550 nm laser irradiation.

Tubular 3D Resistive Random Access Memory Based on Rolled-Up h-BN Tube.

Due to their advantages compared with planar structures, rolled-up tubes have been applied in many fields, such as field-effect transistors, compact capacitors, inductors, and integrative sensors. On the other hand, because of its perfect insulating nature, ultrahigh mechanical strength and atomic thickness property, 2D hexagonal boron nitride (h-BN) is a very suitable material for rolled-up memory applications. In this work, a tubular 3D resistive random access memory (RRAM) device based on rolled-up h-BN tube is realized, which is achieved by self-rolled-up technology.

Schottky Barrier Modulation in Surface Nanoroughened Silicon Nanomembranes for High-Performance Optoelectronics.

Surface nanostructures of silicon nanomembranes (SiNMs) play a dominant role in modulating their energy band structures and trapping surface charges, thus strongly affecting the Schottky barrier height, the surface resistance, and the optoelectronic response of Schottky-contacted SiNMs. Here, controllable nanoroughening of SiNMs without substantial changes in thickness was realized via a metal-masked chemical-etching approach. The mechanism of surface roughness effect on the electrical characteristics and contact properties of SiNM-based diodes and thin-film transistors was investigated.

Flexible Transient Phototransistors by Use of Wafer-Compatible Transferred Silicon Nanomembranes.

Flexible transient photodetectors, a form of optoelectronic sensors that can be physically self-destroyed in a controllable manner, could be one of the important components for future transient electronic systems. In this work, a scalable, device-first, and bottom-up thinning process enables the fabrication of a flexible transient phototransistor on a wafer-compatible transferred silicon nanomembrane. A gate modulation significantly restrains the dark current to 10 A.

ZnO Nanomembrane/Expanded Graphite Composite Synthesized by Atomic Layer Deposition as Binder-Free Anode for Lithium Ion Batteries.

A zinc oxide (ZnO)/expanded graphite (EG) composite was successfully synthesized by using atomic layer deposition with dimethyl zinc as the zinc source and deionized water as the oxidant source. In the composite structure, EG provides a conductive channel and mechanical support to ZnO nanomembranes, which effectively avoids the electrode pulverization caused by the volume change of ZnO. The anodes made from the flexible composite films without using binder, conductive agent, and current collector show high stable capacities especially for that with a moderate ZnO concentration.