Control of positive and negative photo- and thermal-responses in a single PbI@CHNHPbI micro/nanowire-based device for real-time sensing, nonvolatile memory, and logic operation.

CHNHPbI has shown great potential for photodetectors and photovoltaic devices due to its excellent positive response to visible light. However, its real-time response characteristics hinder its application in optical memory and logic operation; moreover, the presence of excessive PbI is a double-edged sword. Herein, we constructed a dual-terminal device using a single CHNHPbI micro/nanowire with two Ag electrodes, and then introduced PbI quantum dots (QDs) as hole trap centres by thermal decomposition at 160 °C.

Self-Powered Photodetector Based on Ag/CHNHPbI/C Asymmetric Dual-Terminal Device.

CHNHPbI is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through - junctions. In this study, we fabricated a Ag/CHNHPbI/C dual-terminal asymmetric electrode device using a single CHNHPbI perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CHNHPbI to visible light. Compared with traditional - junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CHNHPbI, resulting in superior self-powered characteristics.

Actual origin and precise control of asymmetrical hysteresis in an individual CHNHPbI micro/nanowire for optical memory and logic operation.

Although CHNHPbI can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CHNHPbI micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect.