Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance.

In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap than Si, so a heterojunction with SiGe(source)/Si(channel) can result in a smaller tunneling distance, which is very helpful in boosting the tunneling rate. The gate dielectric near the drain region consists of low-k SiO to weaken the gate control of the channel-drain tunneling junction and reduce the ambipolar current (I).

Neuromorphic Photonics Based on Phase Change Materials.

Neuromorphic photonics devices based on phase change materials (PCMs) and silicon photonics technology have emerged as promising solutions for addressing the limitations of traditional spiking neural networks in terms of scalability, response delay, and energy consumption. In this review, we provide a comprehensive analysis of various PCMs used in neuromorphic devices, comparing their optical properties and discussing their applications. We explore materials such as GST (GeSbTe), GeTe-SbTe, GSST (GeSbSeTe), SbS/SbSe, ScSbTe (SST), and InSe, highlighting their advantages and challenges in terms of erasure power consumption, response rate, material lifetime, and on-chip insertion loss.

[Low-temperature-dependent characteristics of Raman scattering in N-type 4H-SiC].

In the present paper, Raman scattering techniques for N-type 4H-SiC single crystal material were performed at the temperatures ranging from 30 to 300 K. These measurements revealed that the Raman phonon modes have a redshift and the linewidth gradually broadens with temperature increasing. Based on the experimental results, the reason for the redshift and broadening is discussed.

[The study of nondestructive defect characterization of SiC by cathodoluminescence].

As the general method of defect characterization is destructive, during the current research on the effect of defect on device, nondestructive defect characterization is important especially. The defects of 4H-SiC homoepitaxial layer had been observed and studied, based on the principle of cathodoluminescence (CL). The results show that the intrinsic stacking faults (SFs), threading edge dislocations (TEDs), threading screw dislocations (TSDs) and basal plane dislocations (BPDs) can be observed by cathodoluminescence.