Boosting the Efficiency and Stability of Perovskite Light-Emitting Devices by a 3-Amino-1-propanol-Tailored PEDOT:PSS Hole Transport Layer.

Properties of the underlying hole transport layer (HTL) in perovskite light-emitting devices (PeLEDs) play a critical role in determining the optoelectronic performance through influencing both the charge transport and the quality of the active perovskite emission layer (EML). This work focuses on manipulating the carrier transport behavior and obtaining a high-quality EML film by tailoring the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HTL with previously unused amino alcohol 3-amino-1-propanol (3AP). The modified PEDOT:PSS rendered a deeper work function that is more suitable for the hole injection from the HTL to EML.

Improved Performance for Thermally Evaporated Perovskite Light-Emitting Devices via Defect Passivation and Carrier Regulation.

Efficient inorganic perovskite light-emitting devices (PeLEDs) with a vacuum-deposited CsPbBr emission layer were realized by introducing an ultrathin 2-phenylethanamine bromide interlayer. The PEA cations not only passivated the nonradiative defects by terminating on the CsPbBr surface but also regulated the charge transport to balance the hole and electron transport. Consequently, the PeLEDs exhibit significantly promoted performance with a turn-on voltage of 3 V, a maximum current efficiency of 14.