Highly transparent and conductive p-type CuI films by optimized solid-iodination at room temperature.

p-type CuI films with optimized optoelectronic performance were synthesized by solid-phase iodination of CuN precursor films at room temperature. The effects of the deposition power of CuN precursors on the structural, electrical, and optical properties of the CuI films were systematically investigated. X-ray diffraction results show that all the CuI films possess a zinc-blende structure.

Influence of annealing temperature on the optoelectronic properties of ITZO thin films.

In this work, the electrical conductivity and optical transparency of the In-Sn-Zn-O (ITZO) films annealed at different temperatures were investigated. The results show that the ITZO films transformed from amorphous phase to crystalline phase after annealed in the air. The transmittance of the films improves significantly and all exceed 88%.