Flexible and Energy-Efficient Synaptic Transistor with Quasi-Linear Weight Update Protocol by Inkjet Printing of Orientated Polar-Electret/High- Oxide Composite Dielectric.

Inkjet printing artificial synapse is cost-effective but challenging in emulating synaptic dynamics with a sufficient number of effective weight states under ultralow voltage spiking operation. A synaptic transistor gated by inkjet-printed composite dielectric of polar-electret polyvinylpyrrolidone (PVP) and high- zirconia oxide (ZrO) is proposed and thus synthesized to solve this issue. Quasilinear weight update with a large variation margin is obtained through the coupling effect and the facilitation of dipole orientation, which can be attributed to the orderly arranged molecule chains induced by the carefully designed microfluidic flows.

Study on the Film-Forming Mechanism of Polymer-Metal Oxide Composite Ink Systems Containing Different Polymer Molecules.

A printable, flexible display panel is an important trend in the field of information display, which requires better mechanical and electrical properties of device materials. Polymer-metal oxide composite materials are promising in the functional layer of a thin-film transistor (TFT) and can be sufficiently fabricated by polymer-metal salt solution systems through the sol-gel process. For the development of polymer-metal oxide composite ink, it is necessary to study the film-forming mechanism of the composite film during solidification, which is an important reference in ink component design.

Critical Effect of Oxygen Pressure in Pulsed Laser Deposition for Room Temperature and High Performance Amorphous In-Ga-Zn-O Thin Film Transistors.

The aspects of low processing temperature and easy running in oxygen atmosphere contribute to the potential of pulsed laser deposition (PLD) in developing a-IGZO TFTs for flexible applications. However, the realization of low-temperature and high-performance devices with determined strategies requires further exploration. In this work, the effect of oxygen pressure and post-annealing processes and their mechanisms on the performance evolution of a-IGZO TFTs by PLD were systematically studied.

Investigation of an Electrochromic Device Based on Ammonium Metatungstate-Iron (II) Chloride Electrochromic Liquid.

Even though electrochromism has been around for more than 50 years, it still has several issues. Multi-layered films, high manufacturing costs, and a short lifetime are present in existing electrochromic devices. We demonstrate a unique high-performance device with a basic structure and no solid electrochromic sheets in this work.

Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision.

Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET).

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in HfZrOthin films.

By adoption of a high permittivity ZrOcapping layer (ZOCL), enhanced ferroelectric properties were achieved in the HfZrO(HZO) thin films. For HZO thin film with 10 Å ZOCL, the 2value can reach as high as ∼43.1C cmunder a sweep electric field of 3 MV cm.

Highly Controllable and Silicon-Compatible Ferroelectric Photovoltaic Synapses for Neuromorphic Computing.

Ferroelectric synapses using polarization switching (a purely electronic switching process) to induce analog conductance change have attracted considerable interest. Here, we propose ferroelectric photovoltaic (FePV) synapses that use polarization-controlled photocurrent as the readout and thus have no limitations on the forms and thicknesses of the constituent ferroelectric and electrode materials. This not only makes FePV synapses easy to fabricate but also reduces the depolarization effect and hence enhances the polarization controllability.

Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VO-Capped HfZrO Thin Films.

A capping layer is known to be critical for stabilizing the ferroelectric (FE) orthorhombic phase (o-phase) in a HfO-based thin film. Here, vanadium oxide (VO), a functional oxide exhibiting the insulator-metal transition, is used as a novel type of a capping layer for the HfZrO (HZO) thin film. It is demonstrated that the VO capping layer (VCL) can enhance the FE properties of the HZO thin film comprehensively.

A Strategy toward Realizing Ultrashort Channels and Microstructures Array by Piezoelectric Inkjet Printing.

Inkjet printing has been proved to be a powerful tool in the cost-effective ambient deposition of functional materials for the fabrication of electronic devices in the past decades. However, restricted by equipment and inks, the feature size of printed dots or lines with conventional inkjet printing is usually limited to several tens of micrometers, which could not fit the requirements for the fabrication of large-area, high-resolution microscale, even nanoscale, structures. Therefore, various technical means were developed for breaking the equipment limits.

Effects of Annealing Temperature on Optical Band Gap of Sol-gel Tungsten Trioxide Films.

Tungsten trioxide (WO₃) is a wide band gap semiconductor material that is used as an important electrochromic layer in electrochromic devices. In this work, the effects of the annealing temperature on the optical band gap of sol-gel WO₃ films were investigated. X-ray Diffraction (XRD) showed that WO₃ films were amorphous after being annealed at 100 °C, 200 °C and 300 °C, respectively, but became crystallized at 400 °C and 500 °C.

Capillary force induced air film for self-aligned short channel: pushing the limits of inkjet printing.

Ultrashort channels of electrodes are essential for the construction of advanced functional devices with high-level integration and high operation speed. However, the channel length of fabricated electrodes is limited to 20 μm in inkjet printing. Although several methods have been previously proposed to obtain short channels, they require extra processing steps.

Zigzag Hollow Cracks of Silver Nanoparticle Film Regulated by Its Drying Micro-environment.

We first verify the critical impact of evaporation on the formation of zigzag hollow cracks by regulating the drying micro-environment of silver nanoparticle film. Uneven evaporation and component segregation contributes to the flows along the surface and inside of droplets. Asymmetric vapor concentration distribution is capable of weakening the surface flow of droplets, thus suppressing the inner compressive stress of nanoparticles and leading to a surface morphology with less cracks.

Critical Impact of Solvent Evaporation on the Resolution of Inkjet Printed Nanoparticles Film.

We first verify the critical role of solvent evaporation on the resolution of inkjet printing. To confirm our hypothesis, we adjusted the evaporation rate gradient along the surface of adjacent droplets by controlling the drying microenvironment. Uneven solvent evaporation flux caused thermocapillary surface flow inward the space of micrometer-sized droplets and increase the air pressure, which prevented the neighboring droplets from coalescence.

UV-Cured Inkjet-Printed Silver Gate Electrode with Low Electrical Resistivity.

Inkjet-printed silver gate electrode with low electrical resistivity was fabricated by UV curing method. By adjusting the UV curing time and the distance between the samples and UV lamp, the effects of UV curing conditions on the electrical resistivity of the silver films were studied, and the lowest electrical resistivity of 6.69 × 10 Ω·m was obtained.

Effect of Post Treatment For Cu-Cr Source/Drain Electrodes on a-IGZO TFTs.

We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows a high mobility of 39.4 cm 2 ·V - 1 ·s - 1 a turn-on voltage of -0.

All-Aluminum Thin Film Transistor Fabrication at Room Temperature.

Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al₂O₃) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al₂O₃ heterojunction unit. The measurements of transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed the smooth interfaces between ~2.

Direct Inkjet Printing of Silver Source/Drain Electrodes on an Amorphous InGaZnO Layer for Thin-Film Transistors.

Printing technologies for thin-film transistors (TFTs) have recently attracted much interest owing to their eco-friendliness, direct patterning, low cost, and roll-to-roll manufacturing processes. Lower production costs could result if electrodes fabricated by vacuum processes could be replaced by inkjet printing. However, poor interfacial contacts and/or serious diffusion between the active layer and the silver electrodes are still problematic for achieving amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs with good electrical performance.

Highly Transparent and Self-Extinguishing Nanofibrillated Cellulose-Monolayer Clay Nanoplatelet Hybrid Films.

A viable solution toward "green" optoelectronics is rooted in our ability to fabricate optoelectronics on transparent nanofibrillated cellulose (NFC) film substrates. However, the flammability of transparent NFC film poses a severe fire hazard in optoelectronic devices. Despite many efforts toward enhancing the fire-retardant features of transparent NFC film, making NFC film fire-retardant while maintaining its high transparency (≥90%) remains an ambitious objective.

Direct patterning of silver electrodes with 2.4μm channel length by piezoelectric inkjet printing.

The control of channel length is of great significance in the fabrication of thin film transistors (TFTs) with high-speed operation. However, achieving short channel on untreated glass by traditional piezoelectric inkjet printing is problematic due to the impacting and rebounding behaviors of droplet impinging on solid surface. Here a novel method was proposed to obtain short channel length on untreated glass by taking advantage of the difference in the retraction velocities on both sides of an ink droplet.