Solar-blind ultraviolet photodetector based on NbC/-GaOheterojunction.

-GaOhas been widely investigated for its stability and thermochemical properties. However, the preparation of-GaOthin films requires complex growth techniques and high growth temperatures, and this has hindered the application of-GaOthin films. In this study,-GaOthin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on-GaOwith a photocurrent of 2.

A High-Performance UVA Photodetector Based on Polycrystalline Perovskite MAPbCl/TiO Nanorods Heterojunctions.

The application of TiO nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl/TiO nanorods heterojunctions has been fabricated to overcome the shortcoming. The structure was composed of horizontal MAPbCl polycrystalline and vertically aligned TiO nanorods array.

Timing Performance Simulation for 3D 4H-SiC Detector.

To meet the high radiation challenge for detectors in future high-energy physics, a novel 3D 4H-SiC detector was investigated. Three-dimensional 4H-SiC detectors could potentially operate in a harsh radiation and room-temperature environment because of its high thermal conductivity and high atomic displacement threshold energy. Its 3D structure, which decouples the thickness and the distance between electrodes, further improves the timing performance and the radiation hardness of the detector.

A PFTBT modified visible-blind ultraviolet photodetector with a narrow detecting range and high responsivity.

A visible-blind ultraviolet (UV) photodetector (PD) based on TiO/polyvinyl carbazole doped with poly {[2,7-(9-(20-ethylhexyl)-9-hexyl-fluorene])-alt-[5,50-(40,70-di-2-thienyl-20,10,30-benzothid-iazole)]} (PFTBT) was successfully fabricated. The introduced PFTBT exhibits high absorbance in the UV region and high conductivity which increases the device absorbance and the efficiency of carrier mobility. Besides, PFTBT acts as traps which can increase the concentration of the majority carrier.

The effect of self-depleting in UV photodetector based on simultaneously fabricated TiO/NiO pn heterojunction and Ni/Au composite electrode.

A novel dark self-depleting ultraviolet (UV) photodetector based on a TiO/NiO pn heterojunction was demonstrated and exhibited lower dark current (I ) and noise. Both the NiO layer and Ni/Au composite electrode were fabricated by a smart, one-step oxidation method which was first employed in the fabrication of the UV photodetector. In dark, the depleted pn heterojunction structure effectively reduced the majority carrier density in TiO/NiO films, demonstrating a high resistance state and contributing to a lower I of 0.

Organics filled one-dimensional TiO nanowires array ultraviolet detector with enhanced photo-conductivity and dark-resistivity.

A heterojunction photo-conductive ultraviolet (UV) detector was developed based on TiO nanowires array (NWA) surrounded by N,N'-bis-(1-naphthalenyl)-N,N'-bis-phenyl-(1,1'-biphenyl)-4,4'-diamine (NPB). The novel and effective two-step method of static infusion and dynamic solution-cleaning was employed to fill NPB into TiO NWA gaps and simultaneously remove the unwelcomed top NPB layer. The device fabricated via the two-step method exhibited optimal performance compared to TiO/NPB device with top NPB layer and TiO NWA device.