Publications by authors named "Ruikang Dong"

Article Synopsis
  • The 2D semiconducting ferromagnet FeGeTe is promising for spintronic applications due to its tunable ferromagnetic ordering at room temperature, but growing large-area single crystals is challenging due to its ternary nature and variable composition.
  • The study theoretically investigates methods for the selective growth of monolayer FeGeTe on specific substrates, concluding that proper modulation of interfacial interactions and the use of suitable feedstocks can limit unwanted impurity phases.
  • Findings indicate that weak interactions with the substrate and interlayer coupling contribute to a growth pattern favoring lateral rather than vertical development, providing guidelines for optimizing growth parameters to achieve phase-pure FeGeTe and potentially guiding future
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Article Synopsis
  • - The rise of two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs), specifically molybdenum disulfide (MoS), is driven by their suitable bandgap, high mobility, and potential for integration in future electronics, aligning with advancements that aim to push the boundaries of Moore's law beyond silicon-based technologies.
  • - While initial MoS devices show promise with high current ratios and low power consumption, significant challenges remain, including the need for uniform, wafer-scale single-crystal MoS growth and precise layer control due to the layer-dependent properties crucial for device performance.
  • - Additionally, issues like high sulfur vacancy density affecting electronic characteristics and high electrical resistance at metal-semiconductor contacts are limiting
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Two-dimensional (2D) ordered carbon-nitrogen binary compounds (CN) show great potential in many fields owing to their diverse structures and outstanding properties. However, the scalable and selective synthesis of 2D CN compounds remain a challenge due to the variable C/N stoichiometry induced coexistence of graphitic, pyridinic, and pyrrolic N species and the competitive growth of graphene. Here, this work systematically explored the mechanism of selective growth of a series of 2D ordered CN compounds, namely, the g-CN, CN, CN, and CN, on various epitaxial substrates via first-principles calculations.

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Two-dimensional (2D) hexagonal boron nitride (-BN) exhibits promising properties for electronic and photoelectric devices, while the growth of high-quality -BN remains challenging. Here we theoretically explored the mechanism of epitaxial growth of high-quality -BN by using the preoxidized and hydrogen-annealed copper substrate, i.e.

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Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon electronics. It has been suggested that bilayer TMDs, which combine good electrostatic control, smaller bandgap and higher mobility than monolayers, could potentially provide improvements in the energy-delay product of transistors. However, despite advances in the growth of monolayer TMDs, the controlled epitaxial growth of multilayers remains a challenge.

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Multilayer MoS shows superior performance over the monolayer MoS for electronic devices while the growth of multilayer MoS with controllable and uniform thickness is still very challenging. It is revealed by calculations that monolayer MoS domains are thermodynamically much more favorable than multilayer ones on epitaxial substrates due to the competition between surface interactions and edge formation, leading accordingly to a layer-by-layer growth pattern and non-continuously distributed multilayer domains with uncontrollable thickness uniformity. The thermodynamics model also suggests that multilayer MoS domains with aligned edges can significantly reduce their free energy and represent a local minimum with very prominent energy advantage on a potential energy surface.

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The reaction of aluminum and water is widely used in the field of propulsion and hydrogen production, but its reaction characteristics at the nanometer scale have not been fully studied. In this paper, the effect of particle size and surface passivation of aluminum particle on the reaction mechanism was studied by using reactive molecular dynamics (RMD) simulation. The reduction of aluminum particle size can accelerate the reaction rate in the medium term (20-80 ps) due to the increase of activity, but it also produces an agglomeration effect as the temperature increases.

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