Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide.

Molybdenum trioxide (MoO), an important transition metal oxide (TMO), has been extensively investigated over the past few decades due to its potential in existing and emerging technologies, including catalysis, energy and data storage, electrochromic devices, and sensors. Recently, the growing interest in two-dimensional (2D) materials, often rich in interesting properties and functionalities compared to their bulk counterparts, has led to the investigation of 2D MoO. However, the realization of large-area true 2D (single to few atom layers thick) MoO is yet to be achieved.

A Library of Atomically Thin 2D Materials Featuring the Conductive-Point Resistive Switching Phenomenon.

Non-volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few-layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX , M = transitional metal, e.

Resistance state evolution under constant electric stress on a MoS non-volatile resistive switching device.

MoS has been reported to exhibit a resistive switching phenomenon in a vertical metal-insulator-metal (MIM) structure and has attracted much attention due to its ultra-thin active layer thickness. Here, the resistance evolutions in the high resistance state (HRS) and low resistance state (LRS) are investigated under constant voltage stress (CVS) or constant current stress (CCS) on MoS resistive switching devices. Interestingly, compared with bulk transition metal oxides (TMO), MoS exhibits an opposite characteristic in the fresh or pre-RESET device in the "HRS" wherein the resistance will increase to an even higher resistance after applying CVS, a unique phenomenon only accessible in 2D-based resistive switching devices.

Observation of single-defect memristor in an MoS atomic sheet.

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers.

Understanding of multiple resistance states by current sweeping in MoS-based non-volatile memory devices.

Recently, various two-dimensional materials have been reported to exhibit non-volatile resistance switching phenomenon. The atomristors, featuring memristor effect in atomically thin nanomaterials such as monolayer transition metal dichalcogenides and hexagonal boron nitride, have drawn much attention due to the extremely thin active layer thickness with the advantages of forming-free characteristic, large on/off resistance ratio and fast switching speed. To investigate the switching mechanisms in the 2D monolayers, we introduced an electrical characterization method by current sweeping to illustrate the detailed information hidden in the commonly used voltage-sweep curves.

Thinnest Nonvolatile Memory Based on Monolayer h-BN.

2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub-nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h-BN), a typical 2D insulator, is reported.

Zero-static power radio-frequency switches based on MoS atomristors.

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches.

Atomristor: Nonvolatile Resistance Switching in Atomic Sheets of Transition Metal Dichalcogenides.

Recently, two-dimensional (2D) atomic sheets have inspired new ideas in nanoscience including topologically protected charge transport,1,2 spatially separated excitons,3 and strongly anisotropic heat transport.4 Here, we report the intriguing observation of stable nonvolatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in the prototypical semiconducting (MX, M = Mo, W; and X = S, Se) transitional metal dichalcogenides (TMDs),5 which alludes to the universality of this phenomenon in TMD monolayers and offers forming-free switching.

Electrodeposition of porous graphene networks on nickel foams as supercapacitor electrodes with high capacitance and remarkable cyclic stability.

Unlabelled: We describe a facile, low-cost, and green method to fabricate porous graphene networks/nickel foam (PG/NF) electrodes by electrochemical deposition of graphene sheets on nickel foams (NFs) for the application of supercapacitor electrodes. The electrodeposition process was accomplished by electrochemical reduction of graphene oxide (GO) in its aqueous suspension. The resultant binder-free PG/NF electrodes exhibited excellent double-layer capacitive performance with a high rate capability and a high specific capacitance of 183.