Diffraction gratings based on a multilayer silicon nitride waveguide with high upward efficiency and large effective length.

Diffraction gratings with high upward diffraction efficiency and large effective length are required for chip-scale light detection and ranging. We propose a diffraction grating based on a multilayer silicon nitride waveguide, which theoretically achieves an upward diffraction efficiency of 92%, a near-field effective length of 376 µm, and a far-field divergence angle of 0.105° at a wavelength of 850 nm.

Significant reduction of thermal conductivity in silicon nanowire arrays.

Vertically aligned single-crystal silicon nanowire arrays (SiNWs) with various lengths, surface roughnesses and porosities were fabricated with the metal-assisted chemical etching method. Using the laser flash technique and differential scanning calorimetry, we characterized the thermal conductivities of bulk SiNWs/Si/SiNWs sandwich-structured composites (SSCs) at room temperature (300 K). The results demonstrate that the thermal conductivities of SSCs notably decrease with increases in the length, surface roughness and porosity of SiNWs.

Self-assembled growth of multi-layer graphene on planar and nano-structured substrates and its field emission properties.

Vertical multi-layer graphenes (MLGs) have been synthesized without a catalyst on planar and nano-structured substrates by using microwave plasma enhanced chemical vapor deposition. The growth of MLGs on non-carbon substrates is quite different from that on carbon-based substrates. It starts with a pre-deposition of a carbon buffer layer to achieve a homo-epitaxial growth.

Surface morphology-dependent photoelectrochemical properties of one-dimensional Si nanostructure arrays prepared by chemical etching.

Maximizing the optical absorption of one-dimensional Si nanostructure arrays (1DSiNSAs) is desirable for excellent performance of 1DSiNSA-based optoelectronic devices. However, a quite large surface-to-volume ratio and enhanced surface roughness are usually produced by modulation of the morphology of the 1DSiNSAs prepared in a top-down method to improve their optical absorption. Surface recombination is mainly determined by the surface characteristics and significantly affects the photogenerated carrier collection.

Structures and field emission properties of silicon nanowire arrays implanted with energetic carbon ion beam.

Structures and field emission properties of silicon nanowire arrays (SiNWAs), which were fabricated by using of electroless-chemical etching method and post-implanted by the energetic carbon ion beam with an average energy of 20 keV at various doses, have been investigated. Structural analysis of SEM and XPS shows that SiC compound had been formed at the top of SiNWAs, and Si-C/Si composite nanostructure had been obtained. Compared to as-grown SiNWAs, the C ion implanted SiNWAs have better field emission characteristics.

Enhanced electron field emission from carbon nanotubes irradiated by energetic C ions.

The field emission performance and structure of the vertically aligned multi-walled carbon nanotube arrays irradiated by energetic C ion with average energy of 40 keV have been investigated. During energetic C ion irradiation, the curves of emission current density versus the applied field of samples shift firstly to low applied fields when the irradiation doses are less than 9.6 x 10(16) cm(-2), and further increase of dose makes the curves reversing to a high applied field, which shows that high dose irradiation in carbon nanotube arrays makes their field emission performance worse.

Vapor-solid growth of few-layer graphene using radio frequency sputtering deposition and its application on field emission.

The carbon nanotube (CNT) and graphene hybrid is an attractive candidate for field emission (FE) because of its unique properties, such as high conductivity, large aspect ratio of CNT, and numerous sharp edges of graphene. We report here a vapor-solid growth of few-layer graphene (FLG, less than 10 layers) on CNTs (FLG/CNT) and Si wafers using a radio frequency sputtering deposition system. Based on SEM, TEM, and Raman spectrum analyses, a defect nucleation mechanism of the FLG growth was proposed.

Field emission enhancement of Au-Si nano-particle-decorated silicon nanowires.

Au-Si nano-particle-decorated silicon nanowire arrays have been fabricated by Au film deposition on silicon nanowire array substrates and then post-thermal annealing under hydrogen atmosphere. Field emission measurements illustrated that the turn-on fields of the non-annealed Au-coated SiNWs were 6.02 to 7.

Structures and field emission characteristics of ion irradiated silicon nanowire arrays.

Silicon nanowire (SiNW) arrays irradiated by energetic Si ions were fabricated by metal vapor vacuum arc (MEVVA) ion implantation method. Hetero-structure of amorphous/crystalline nanowire was formed in which structure of the implanted region on the top of the nanowires was amorphous while the structure of unimplanted region on the bottom remained crystal. Field emission (FE) properties of the SiNW arrays could be improved and modulated by different implantation doses.

Fabrication and Properties of Ag-nanoparticles Embedded Amorphous Carbon Nanowire/CNT Heterostructures.

Carbon nanotubes were subjected to doping with an energetic Ag ion beam, and the carbon nanotubes on the top of the array were transformed into amorphous carbon nanowires with embedded Ag-nanoparticles. The field emission characteristics of these nanowires were investigated. The minimum turn-on and threshold fields were 0.

[A comparative Raman study of carbon nanotubes allays].

A series of comparative Raman study of carbon nanotubes arrays prepared by thermal chemical vapor deposition are reported. The results suggest that the G mode and D mode of carbon nanotubes (CNTs) arrays are all downshifted as compared to that of polycrystalline graphite, and the shifted number in well-aligned CNTs arrays is more than that in misaligned CNTs arrays. Moreover, the intensity ratio ID/IG indicates the ordering in CNTs arrays.