Incommensurate charge super-modulation and hidden dipole order in layered kitaev material α-RuCl.

The magnetism of Kitaev materials has been widely studied, but their charge properties and the coupling to other degrees of freedom are less known. Here we investigate the charge states of α-RuCl, a promising Kitaev quantum spin liquid candidate, in proximity to graphite. We discover that few-layered α-RuCl experiences a clear modulation of charge states, where a Mott-insulator to weak charge-transfer-insulator transition in the 2D limit occurs by means of heterointerfacial polarization.

Excitonic topological order in imbalanced electron-hole bilayers.

Correlation and frustration play essential roles in physics, giving rise to novel quantum phases. A typical frustrated system is correlated bosons on moat bands, which could host topological orders with long-range quantum entanglement. However, the realization of moat-band physics is still challenging.

Observation of 1D Fermi arc states in Weyl semimetal TaAs.

Fermi arcs on Weyl semimetals exhibit many exotic quantum phenomena. Usually found on atomically flat surfaces with approximate translation symmetry, Fermi arcs are rooted in the peculiar topology of bulk Bloch bands of 3D crystals. The fundamental question of whether a 1D Fermi arc can be probed remains unanswered.

Cryogen-free one hundred microkelvin refrigerator.

A temperature below 100 µK is achieved in a customized cryogen-free dilution refrigerator with a copper-nuclear demagnetization stage. The lowest temperature of conduction electrons of the demagnetization stage is below 100 µK as measured by using a pulsed platinum nuclear magnetic resonance thermometer, and the temperature can remain below 100 µK for over 10 h. A demagnetization magnetic field of up to 9 T and a research magnetic field of up to 12 T can be controlled independently, provided by a coaxial room-temperature-bore cryogen-free magnet.

[Nitrogen uptake, distribution, and utilization in young bearing Huangguan pear trees under N-urea application in spring].

We investigated the characteristics of nitrogen uptake, distribution, and utilization in the three-year-old bearing Huangguan pear trees following N-urea application in early spring. The results showed that the growth of pear trees was mainly depended on vegetative organs such as shoots and leaves at the stage from budbreak to shoot growth arrest, but mainly on storage organs (roots) and supplemented by the formation of fruit yield and quality at the stage from shoot growth arrest stage to fruit harvest. Meanwhile, tree biomass, especially that storage organs, substantially increased.

Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells.

We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the resistance. Characteristically, the in-gap oscillation frequency is higher than the Shubnikov-de Haas oscillation close to the conduction band edge in the metallic regime.

Evidence for a topological excitonic insulator in InAs/GaSb bilayers.

Electron-hole pairing can occur in a dilute semimetal, transforming the system into an excitonic insulator state in which a gap spontaneously appears at the Fermi surface, analogous to a Bardeen-Cooper-Schrieffer (BCS) superconductor. Here, we report optical spectroscopic and electronic transport evidence for the formation of an excitonic insulator gap in an inverted InAs/GaSb quantum-well system at low temperatures and low electron-hole densities. Terahertz transmission spectra exhibit two absorption lines that are quantitatively consistent with predictions from the pair-breaking excitation dispersion calculated based on the BCS gap equation.

Tuning Edge States in Strained-Layer InAs/GaInSb Quantum Spin Hall Insulators.

We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced up to fivefold as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry-protected properties consistent with the Z_{2} topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.

Observation of a Helical Luttinger Liquid in InAs/GaSb Quantum Spin Hall Edges.

We report on the observation of a helical Luttinger liquid in the edge of an InAs/GaSb quantum spin Hall insulator, which shows characteristic suppression of conductance at low temperature and low bias voltage. Moreover, the conductance shows power-law behavior as a function of temperature and bias voltage. The results underscore the strong electron-electron interaction effect in transport of InAs/GaSb edge states.

Robust helical edge transport in gated InAs/GaSb bilayers.

We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length.

Images of edge current in InAs/GaSb quantum wells.

Quantum spin Hall devices with edges much longer than several microns do not display ballistic transport; that is, their measured conductances are much less than e(2)/h per edge. We imaged edge currents in InAs/GaSb quantum wells with long edges and determined an effective edge resistance. Surprisingly, although the effective edge resistance is much greater than h/e(2), it is independent of temperature up to 30 K within experimental resolution.

Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells.

We observe edge transport in the topologically insulating InAs/GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2/h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.

Andreev reflection of helical edge modes in InAs/GaSb quantum spin Hall insulator.

We present an experimental study of S-N-S junctions, with N being a quantum spin Hall insulator made of InAs/GaSb. A front gate is used to vary the Fermi level into the minigap, where helical edge modes exist [Phys. Rev.

Evidence for helical edge modes in inverted InAs/GaSb quantum wells.

We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. An electrostatic gate is used to push the Fermi level into the gap regime, where the conductance as a function of sample length and width is measured. Our analysis shows strong evidence for the existence of helical edge modes proposed by Liu et al [Phys.