Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO/Si substrate.

Hybrid integration of III-V materials onto silicon by direct bonding technique is a mature and promising approaches to develop advanced photonic integrated devices into the silicon photonics platform. In this approach, the III-V material stack is grown on an InP wafer in a unique epitaxial step prior to the direct bonding process onto the silicon-on-insulator wafer. Currently, no additional epitaxial regrowth steps are implemented after bonding.