Two-Step Growth of Uniform Monolayer MoS Nanosheets by Metal-Organic Chemical Vapor Deposition.

To achieve large area growth of transition metal dichalcogenides of uniform monolayer thickness, we demonstrate metal-organic chemical vapor deposition (MOCVD) growth under low pressure followed by a high-temperature sulfurization process under atmospheric pressure (AP). Following sulfurization, the MOCVD-grown continuous MoS film transforms into compact triangular crystals of uniform monolayer thickness as confirmed from the sharp distinct photoluminescence peak at 1.8 eV.

Out-of-Plane Electromechanical Response of Monolayer Molybdenum Disulfide Measured by Piezoresponse Force Microscopy.

Two-dimensional (2D) materials have recently been theoretically predicted and experimentally confirmed to exhibit electromechanical coupling. Specifically, monolayer and few-layer molybdenum disulfide (MoS) have been measured to be piezoelectric within the plane of their atoms. This work demonstrates and quantifies a nonzero out-of-plane electromechanical response of monolayer MoS and discusses its possible origins.

Uncovering edge states and electrical inhomogeneity in MoS2 field-effect transistors.

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS2 field-effect transistors by microwave impedance microscopy (MIM).

Effects of Uniaxial and Biaxial Strain on Few-Layered Terrace Structures of MoS₂ Grown by Vapor Transport.

One of the most fascinating properties of molybdenum disulfide (MoS2) is its ability to be subjected to large amounts of strain without experiencing degradation. The potential of MoS2 mono- and few-layers in electronics, optoelectronics, and flexible devices requires the fundamental understanding of their properties as a function of strain. While previous reports have studied mechanically exfoliated flakes, tensile strain experiments on chemical vapor deposition (CVD)-grown few-layered MoS2 have not been examined hitherto, although CVD is a state of the art synthesis technique with clear potential for scale-up processes.

Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime.

Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized.

Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates.

Because of the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nanosheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation.

Radio Frequency Transistors and Circuits Based on CVD MoS2.

We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved.

Revealing the planar chemistry of two-dimensional heterostructures at the atomic level.

Two-dimensional (2D) atomic crystals and their heterostructures are an intense area of study owing to their unique properties that result from structural planar confinement. Intrinsically, the performance of a planar vertical device is linked to the quality of its 2D components and their interfaces, therefore requiring characterization tools that can reveal both its planar chemistry and morphology. Here, we propose a characterization methodology combining (micro-) Raman spectroscopy, atomic force microscopy and time-of-flight secondary ion mass spectrometry to provide structural information, morphology and planar chemical composition at virtually the atomic level, aimed specifically at studying 2D vertical heterostructures.

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation.

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using high-κ oxides, respectively. The goal of this work is to demonstrate a high-κ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide (MoS2). Utilizing amorphous titanium suboxide (ATO) as the "high-κ dopant", we achieved a contact resistance of ∼180 Ω·μm that is the lowest reported value for ML MoS2.

Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique.

The success of isolating small flakes of atomically thin layers through mechanical exfoliation has triggered enormous research interest in graphene and other two-dimensional materials. For device applications, however, controlled large-area synthesis of highly crystalline monolayers with a low density of electronically active defects is imperative. Here, we demonstrate the electrical imaging of dendritic ad-layers and grain boundaries in monolayer molybdenum disulfide (MoS2) grown by a vapor transport technique using microwave impedance microscopy.

Controlled seeding of laser deposited Ta:TiO2 nanobrushes and their performance as photoanode for dye sensitized solar cells.

Hexagonal patterned indium tin oxide (ITO) with a height of 1.5 μm was fabricated on fluorinated SnO2 (FTO) substrate via nanoimprint lithography and pulsed laser deposition (PLD). Tantalum doped TiO2 was deposited on the patterned substrate by PLD.

Surface patterning of mesoporous niobium oxide films for solar energy conversion.

An array of periodic surface features were patterned on mesoporous niobium oxide films by a soft-lithographic technique with the goal of constructing a photonic crystal (PC) structure on the back side of the oxide. The oxide films, fabricated by mixing sol-gel derived niobium oxide nanoparticles and hydroxypropyl cellulose, were employed as photoelectrodes in dye-sensitized solar cells (DSSCs), and their performance evaluated against their flat counterparts. The surface patterns were imprinted using a photocurable perfluoropolyether (PFPE) soft-replica of a silicon master with a two-dimensional array of cylindrical posts (200 nm (D) × 200 nm (H)) in hexagonal geometry.

Increasing photocurrents in dye sensitized solar cells with tantalum-doped titanium oxide photoanodes obtained by laser ablation.

Laser ablation is employed to produce vertically aligned nanostructured films of undoped and tantalum-doped TiO(2) nanoparticles. Dye-sensitized solar cells using the two different materials are compared. Tantalum-doped TiO(2) photoanode show 65% increase in photocurrents and around 39% improvement in overall cell efficiency compared to undoped TiO(2).

Nanoforest Nb2O5 photoanodes for dye-sensitized solar cells by pulsed laser deposition.

Vertically aligned bundles of Nb(2)O(5) nanocrystals were fabricated by pulsed laser deposition (PLD) and tested as a photoanode material in dye-sensitized solar cells (DSSC). They were characterized using scanning and transmission electron microscopies, optical absorption spectroscopy (UV-vis), and incident-photon-to-current efficiency (IPCE) experiments. The background gas composition and the thickness of the films were varied to determine the influence of those parameters in the photoanode behavior.